We are proud to announce that one of the world's most important semiconductor players for SiC and GaN has chosen our ETNA MOSBTS-M Solution for testing of its WBG devices.

The first system will be installed in Q1 of 2024 and will be used in the R&D center of our customer.

«In the initial months of next year we will start this important project that confirms the reliability of our Burn-in platform for Back-End – says our R&D and Technical Director Alessandro Polpetta – ETNA MOSBTS-M, equipped with new features to meet the stress requirements of WBG devices, has been appreciated for its various functionalities, such as the leakage measurement accuracy during HV test stress or its test flow configurability. We thank our customer for the trust in our product, capable of satisfying the high-demanding requests of the market».